Spin-polarized magneto-electronic properties in buckled monolayer GaAs

Abstract

We develop the generalized tight-binding model to fully explore the magneto-electronic properties of monolayer GaAs, where the buckled structure, multi-orbital chemical bondings, spin-orbit coupling, electric field, and magnetic field are considered simultaneously. The diverse magnetic quantization covers three groups of spin-polarized Landau levels (LLs) near the Fermi level, with the unique initial energies, LL degeneracy, energy spacings, magnetic-field-dependence, and spin splitting. Furthermore, the Landau state probabilities exhibit specific oscillation patterns, being composed of the localization centers, node regularities, and energy-dependent variations of the dominating orbitals. The density of states directly reflects the main features of the LL energy spectra in the form, height, number, and frequency of the spin-split delta-function-like prominent peaks. The electric field leads to the monotonous/nonmonotonous LL energy dispersions, LL crossing behavior, gap modulation, phase transition and enhancement of spin splitting. The complex gap modulations and even semiconductor-semimetal transitions are attributed to the strong competition among the intrinsic interactions, magnetic field, and electric field. Such predicted magneto-electronic properties could be verified by scanning tunneling spectroscopy and are helpful in designing the top-gated and phase-change electronic devices.