Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy
- 2 January 2019
- journal article
- research article
- Published by Springer Science and Business Media LLC in Science China Physics Mechanics and Astronomy
- Vol. 62 (6), 67311
- https://doi.org/10.1007/s11433-018-9320-x
Abstract
No abstract availableKeywords
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