Plasmon-Induced Trap State Emission from Single Quantum Dots
- 26 January 2021
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 126 (4), 047402
- https://doi.org/10.1103/physrevlett.126.047402
Abstract
Charge carriers trapped at localized surface defects play a crucial role in quantum dot (QD) photophysics. Surface traps offer longer lifetimes than band-edge emission, expanding the potential of QDs as nanoscale light-emitting excitons and qubits. Here, we demonstrate that a nonradiative plasmon mode drives the transfer from two-photon-excited excitons to trap states. In plasmonic cavities, trap emission dominates while the band-edge recombination is completely suppressed. The induced pathways for excitonic recombination not only shed light on the fundamental interactions of excitonic spins, but also open new avenues in manipulating QD emission, for optoelectronics and nanophotonics applications.Funding Information
- Engineering and Physical Sciences Research Council (EP/L027151/1, EU THOR 829067, POSEIDON 861950)
- Gates Cambridge Trust
- China Scholarship Council
- Nederlandse Organisatie voor Wetenschappelijk Onderzoek
- Trinity College, University of Cambridge
- FP7 People: Marie-Curie Actions (706425)
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