Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique
- 14 September 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Silicon
- Vol. 13 (11), 3909-3925
- https://doi.org/10.1007/s12633-020-00655-3
Abstract
No abstract availableKeywords
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