2D MoS 2 Heterostructures on Epitaxial and Self‐Standing Graphene for Energy Storage: From Growth Mechanism to Application
- 13 October 2021
- journal article
- research article
- Published by Wiley in Advanced Materials Technologies
- Vol. 7 (4), 2100963
- https://doi.org/10.1002/admt.202100963
Abstract
No abstract availableFunding Information
- Queensland University of Technology
- Australian Government
- Australian Research Council (DP200102546)
- Japan Society for the Promotion of Science (JP21H02037)
This publication has 98 references indexed in Scilit:
- High‐Quality Three‐Dimensional Nanoporous GrapheneAngewandte Chemie, 2014
- Direct Synthesis of van der Waals SolidsACS Nano, 2014
- Tuning Dirac states by strain in the topological insulator Bi2Se3Nature Physics, 2014
- MoS2 Field-Effect Transistor for Next-Generation Label-Free BiosensorsACS Nano, 2014
- Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenideNature Nanotechnology, 2014
- Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene HeterostructuresACS Nano, 2013
- Preparation of MoS2‐Coated Three‐Dimensional Graphene Networks for High‐Performance Anode Material in Lithium‐Ion BatteriesSmall, 2013
- A mechanism for carbon nanosheet formationCarbon, 2007
- Synthesis of graphene-based nanosheets via chemical reduction of exfoliated graphite oxideCarbon, 2007
- Self-ordering of Ge islands on step-bunched Si(111) surfacesApplied Physics Letters, 2003