The effect of the dopant’s reactivity for high-performance 2D MoS2 thin-film transistor
- 21 September 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nano Research
- Vol. 14 (1), 198-204
- https://doi.org/10.1007/s12274-020-3068-2
Abstract
No abstract availableThis publication has 42 references indexed in Scilit:
- Mobility engineering and a metal–insulator transition in monolayer MoS2Nature Materials, 2013
- High Performance Multilayer MoS2 Transistors with Scandium ContactsNano Letters, 2012
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- Symmetry-dependent phonon renormalization in monolayer MoStransistorPhysical Review B, 2012
- From Bulk to Monolayer MoS2: Evolution of Raman ScatteringAdvanced Functional Materials, 2012
- Photoluminescence from Chemically Exfoliated MoS2Nano Letters, 2011
- Organic Functionalization of Germanium Nanowires using Arenediazonium SaltsChemistry of Materials, 2011
- A scanning Kelvin probe study of charge trapping in zone-cast pentacene thin film transistorsNanotechnology, 2008
- Electronic Structure of Methoxy-, Bromo-, and Nitrobenzene Grafted onto Si(111)The Journal of Physical Chemistry B, 2006
- Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuitsProceedings of the IEEE, 2003