Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications

Abstract

The present research letter is dedicated to a detailed analysis of a double-gate tunnel field-effect transistor (DG-TFET). The DG-TFET provides improved on-current (ION) than a conventional TFET via band-to-band (B2B) tunneling. However, DG-TFET is disadvantageous for low-power applications because of increased off-current (IOFF) due to the large ambipolar current (Iamb). In this research work, a Si/GaAs/GaAs heterostructure DG-TFET is considered as research base for investigation of device performance.