Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

Abstract

Ba₃TaGa₃Si₂O₁₄ (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La₃Ga₅SiO₁₄ which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.