Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

Abstract
No abstract available
Funding Information
  • National Natural Science Foundation of China (61306006, 61674131)
  • Excellent Youth Foundation of Hebei (F2019516002)
  • Key Research and Development Program of Hebei (19211501D)
  • Basic research program of Hebei (18961020D)