Spin-polarized light-emitting diode using metal/insulator/semiconductor structures
- 22 July 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (4), 694-696
- https://doi.org/10.1063/1.1496493
Abstract
We have succeeded in growingferromagnetic metals (Co, Fe, and NiFe)/Al 2 O 3 / AlGaAs heterostructures with homogeneous flat interfaces. The electroluminescence from a light-emitting diode with a metal/insulator/semiconductor (MIS)structure depends on the magnetization direction of the ferromagnetic electrode. This fact shows that a spin injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1% at room temperature.This publication has 16 references indexed in Scilit:
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