Identification of embedded nanotwins at c-Si/a-Si:H interface limiting the performance of high-efficiency silicon heterojunction solar cells
Top Cited Papers
- 8 February 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Energy
- Vol. 6 (2), 194-202
- https://doi.org/10.1038/s41560-020-00768-4
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (62034001, 11874314, No. 11774016)
- Beijing Academic Outstanding Young Scientists Projects
- Australian Research Council
- Beijing Great Wall Scholars Program
This publication has 51 references indexed in Scilit:
- The Amorphous/Crystalline Silicon Interface Research of HIT Solar Cells by SimulationAdvanced Materials Research, 2013
- Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cellsApplied Physics Letters, 2012
- High-efficiency Silicon Heterojunction Solar Cells: A ReviewGreen, 2012
- On the determination of the emitter saturation current density from lifetime measurements of silicon devicesProgress in Photovoltaics: Research and Applications, 2012
- Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatmentApplied Physics Letters, 2011
- Effect of Copassivation of Cl and Cu on CdTe Grain BoundariesPhysical Review Letters, 2008
- VESTA: a three-dimensional visualization system for electronic and structural analysisJournal of Applied Crystallography, 2008
- Impact of epitaxial growth at the heterointerface of a-Si:H∕c-Si solar cellsApplied Physics Letters, 2007
- Atomic Structure of Faceted Σ3 CSL Grain Boundary in Silicon: HRTEM and Ab-initio CalculationMATERIALS TRANSACTIONS, 2007
- On twin and stacking fault formation during the epitaxial film growth of f.c.c. materials on (111) substratesphysica status solidi (a), 1988