Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl3 dry etching
- 14 December 2020
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 14 (1), 012003
- https://doi.org/10.35848/1882-0786/abcfd7
Abstract
We demonstrated GaN-based vertical-cavity surface emitting lasers (VCSELs) with 5–30 μm wide nano-height cylindrical waveguide formed by BCl3 etching. A 5 nm-depth etching with BCl3 showed the most efficient current blocking at the interface of the etched p++-GaN and an ITO electrode among the cases with BCl3, Ar, or O2, which could be due to not only etching damages but also diffused B atoms into the etched surface. While room-temperature continuous-wave operations of the VCSELs with the large apertures were demonstrated, maximum light output power values of the large aperture VCSELs seemed limited by nonuniform current injection and device thermal resistances.Keywords
Funding Information
- the JST CREST (16815710)
- the MEXT Private University Research Branding Project
- the JSPS KAKENHI for Scientific Research A (20H00353)
- the JSPS KAKENHI for Innovative Areas (16H06416)
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