High-Temperature Analysis of GaN-Based MQW Photodetector for Optical Galvanic Isolations in High-Density Integrated Power Modules
- 18 February 2020
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Emerging and Selected Topics in Power Electronics
- Vol. 9 (4), 3877-3882
- https://doi.org/10.1109/jestpe.2020.2974788
Abstract
The InGaN/GaN MQW structure is demonstrated as a possible solution for high-temperature photodiode applications. High temperature spectral and noise analysis of InGaN/GaN MQW structure are performed for the potential integration as a detector in future power electronics applications. The spectral response was measured under photovoltaic and bias modes for the temperature range of 77 - 800 K. A peak spectral responsivity of 27.0 mA/W at 440 nm at 500 K is recorded. The peak external quantum efficiency of the device was calculated to be in the range of 5 - 8 % in the temperature range 77 - 800 K. The photodetector sensitivity of the structure is quantified using the material figure of merit parameter, D* for different temperature and biased voltages. A peak detectivity of 4 x 108 cmHz1/2W-1 is observed at 800 K with zero bias at 440 nm.Keywords
Funding Information
- Sandia National Laboratories (DE-SC0016485)
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