Resistive switching devices based on nanocrystalline solid electrolyte (AgI)0.5(AgPO3)0.5

Abstract

Resistive switching devices with a sandwich structure $\mathrm{Ag}∕{\left(\mathrm{Ag}\mathrm{I}\right)}_{0.5}{\left(\mathrm{Ag}\mathrm{P}{\mathrm{O}}_3\right)}_{0.5}∕\mathrm{Pt}$ were fabricated on silicon(001) wafer by using the pulsed laser deposition method and the focused ion beam nanofabrication technique. ${\left(\mathrm{Ag}\mathrm{I}\right)}_{0.5}{\left(\mathrm{Ag}\mathrm{P}{\mathrm{O}}_3\right)}_{0.5}$ films deposited at room temperature show a nanocrystal structure and the composition of the films was identified by using x-ray photoelectron spectroscopy. The current-voltage characteristics of the $\mathrm{Ag}∕{\left(\mathrm{Ag}\mathrm{I}\right)}_{0.5}{\left(\mathrm{Ag}\mathrm{P}{\mathrm{O}}_3\right)}_{0.5}∕\mathrm{Pt}$ memory units show good switching behaviors. The ratio of the conductance between the “ON” state (high conductance) and the “off” state (low conductance) reaches $1\times {10}^6$ . The ON and OFF states can be effectively written, read, and erased up to $4\times {10}^5$ scanning cycles by using a set of voltage pulses with an amplitude less than $3\mathrm{V}$ . It also could be observed that the time for the writing and erasing operations could be less than $150\mathrm{ns}$ . The switching mechanism of the $\mathrm{Ag}∕{\left(\mathrm{Ag}\mathrm{I}\right)}_{0.5}{\left(\mathrm{Ag}\mathrm{P}{\mathrm{O}}_3\right)}_{0.5}∕\mathrm{Pt}$ memory devices was ascribed to the possible formation and dissolution of Ag filaments in ${\left(\mathrm{Ag}\mathrm{I}\right)}_{0.5}{\left(\mathrm{Ag}\mathrm{P}{\mathrm{O}}_3\right)}_{0.5}$ films induced by the applied electrical pulses with different polarities.