Atomically Thin van der Waals Semiconductors—A Theoretical Perspective
Open Access
- 26 February 2021
- journal article
- review article
- Published by Wiley in Laser & Photonics Reviews
- Vol. 15 (4), 2000482
- https://doi.org/10.1002/lpor.202000482
Abstract
No abstract availableKeywords
Funding Information
- Deutsche Forschungsgemeinschaft (Gi 1121/4‐1, St2943/1‐1, RTG2247)
This publication has 186 references indexed in Scilit:
- Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenidesPhysical Review B, 2013
- Tightly bound trions in monolayer MoS2Nature Materials, 2012
- Mott transition of excitons in GaAs-GaAlAs quantum wellsNew Journal of Physics, 2012
- Ionization equilibrium in an excited semiconductor: Mott transition versus Bose-Einstein condensationPhysical Review B, 2009
- Substrate-induced bandgap opening in epitaxial grapheneNature Materials, 2007
- Many-body correlations and excitonic effects in semiconductor spectroscopyProgress in Quantum Electronics, 2006
- Luminescence of a semiconductor quantum dot systemZeitschrift für Physik B Condensed Matter, 2006
- Influence of Coulomb and phonon interaction on the exciton formation dynamics in semiconductor heterostructuresPhysical Review B, 2003
- The Mass Action Law in Two‐Component Fermi Systems Revisited Excitons and Electron‐Hole PairsPhysica Status Solidi (b), 1985
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984