Photochemically-Activated p-Type CuGaO2 Thin Films for Highly-Stable Room-Temperature Gas Sensors

Abstract
The photochemical activation process is a promising way to operate metal oxide gas sensors at room temperature. However, this technique is only used in n-type semiconductors. In this study, we report a highly stable p-type copper gallium oxide (CuGaO2) gas sensor fabricated through the facile sol-gel process. The sensor is capable of detecting O-3 gas at room temperature, and its gas response can be further enhanced by ultraviolet (UV) activation. The highest gas response of 7.12 to 5 ppm O-3 gas at a UV intensity of 10 mW cm(-2) is achieved at room-temperature. In addition, the CuGaO2 sensor shows excellent long-term stability, with a degradation of approximately 3% over 90 days. These results strongly support the solution-processed CuGaO2 as a good candidate for room-temperature gas sensors.
Funding Information
  • Ministry of Science and Technology, Taiwan (MOST 111-2221-E-260-010)