Catalyst-free growth of dense γ-In2Se3 nanosheet arrays and their application in photoelectric detectors
- 3 January 2020
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 31 (19), 195601
- https://doi.org/10.1088/1361-6528/ab674a
Abstract
In this work, the dense γ-In2Se3 nanosheets array has been fabricated using chemical vapor deposition method under atmosphere pressure. Compared with crystal silicon, the photodetector based on γ-In2Se3/ p-Si heterojunction exhibits a high responsivity (96.7 mA W-1) at near-infrared region, a presentable current on/off ratio (~1000) and an excellent detectivity (2.03 × 1012 jones). Simultaneously, the obtained photodetector performed fast response speed (0.15ms/0.5ms) and a broadband sensitive wavelength from ultraviolet (340 nm) to near-infrared (1020 nm). The photoelectric experimental data of the device shows that its high performance is attributed to the high light absorption capacity of the material, the rational energy band structures of γ-In2Se3 and p-Si, and the effectively separation of photo-generated carriers caused by the formed type-II heterojunction. Our work provides primary experimental basis for the photodetection application of γ-In2Se3 nanostructure.Keywords
Funding Information
- National Natural Science Foundation of China (21676213)
This publication has 58 references indexed in Scilit:
- Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric PerformancesSmall, 2014
- High performance few-layer GaS photodetector and its unique photo-response in different gas environmentsNanoscale, 2013
- Controlled Growth of Atomically Thin In2Se3 Flakes by van der Waals EpitaxyJournal of the American Chemical Society, 2013
- A carbon modified MnO2 nanosheet array as a stable high-capacitance supercapacitor electrodeJournal of Materials Chemistry A, 2013
- Tunable Graphene–Silicon Heterojunctions for Ultrasensitive PhotodetectionNano Letters, 2013
- Well-Defined Colloidal 2-D Layered Transition-Metal Chalcogenide Nanocrystals via Generalized Synthetic ProtocolsJournal of the American Chemical Society, 2012
- Single-Layer MoS2PhototransistorsACS Nano, 2011
- Nanostructured materials for photon detectionNature Nanotechnology, 2010
- Si avalanche photodetectors fabricated in standard complementary metal-oxide-semiconductor processApplied Physics Letters, 2007
- Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layerApplied Physics Letters, 2007