Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement
- 25 June 2020
- journal article
- research article
- Published by Wiley in Advanced Materials Interfaces
- Vol. 7 (17), 2000844
- https://doi.org/10.1002/admi.202000844
Abstract
No abstract availableKeywords
Funding Information
- Defense Advanced Research Projects Agency (N66001‐17‐1‐4047)
- National Science Foundation (1752295)
This publication has 60 references indexed in Scilit:
- Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer depositionNanoscale Research Letters, 2013
- Structural and Electrical Properties of Atomic Layer Deposited Al‐Doped ZnO FilmsAdvanced Functional Materials, 2010
- Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devicesSolar Energy Materials and Solar Cells, 2010
- Luminescence from Zinc Oxide Nanostructures and Polymers and their Hybrid DevicesMaterials, 2010
- In Situ Analysis of Dopant Incorporation, Activation, and Film Growth during Thin Film ZnO and ZnO:Al Atomic Layer DepositionThe Journal of Physical Chemistry C, 2009
- Role of Gas Doping Sequence in Surface Reactions and Dopant Incorporation during Atomic Layer Deposition of Al-Doped ZnOChemistry of Materials, 2009
- Epsilon-near-zero metamaterials and electromagnetic sources: Tailoring the radiation phase patternPhysical Review B, 2007
- Tunneling of Electromagnetic Energy through Subwavelength Channels and Bends using-Near-Zero MaterialsPhysical Review Letters, 2006
- Film Uniformity in Atomic Layer DepositionChemical Vapor Deposition, 2006
- Scattering-matrix approach to multilayer diffractionJournal of the Optical Society of America A, 1995