IGBT Failure mechanism and boundary analysis under large current and high temperature turn-off
Open Access
- 1 February 2021
- journal article
- research article
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 1754 (1), 012036
- https://doi.org/10.1088/1742-6596/1754/1/012036
Abstract
Considering overload working conditions in electromagnetic emission, the paper presents a simulation of IGBT turn-off under large current and high temperature. Numerous simulation result is received under a specific test circuit. Boundary conditions for temperature, current and starry inductance are obtained under a set of temperature criterion. Further analysis proves that after temperature reaches the criterion, high current density path swiftly extends from local area to a vertical current path throughout the cells. This method for IGBT theoretical boundary is useful for similar projects or working conditions.This publication has 3 references indexed in Scilit:
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