Picosecond terahertz pump-probe realized from Chinese terahertz free-electron laser*
- 1 July 2020
- journal article
- research article
- Published by IOP Publishing in Chinese Physics B
- Vol. 29 (8), 084101
- https://doi.org/10.1088/1674-1056/ab961b
Abstract
Electron energy relaxation time tau is one of the key physical parameters for electronic materials. In this study, we develop a new technique to measure tau in a semiconductor via monochrome picosecond (ps) terahertz (THz) pump and probe experiment. The special THz pulse structure of Chinese THz free-electron laser (CTFEL) is utilized to realize such a technique, which can be applied to the investigation into THz dynamics of electronic and optoelectronic materials and devices. We measure the THz dynamical electronic properties of high-mobility n-GaSb wafer at 1.2 THz, 1.6 THz, and 2.4 THz at room temperature and in free space. The obtained electron energy relaxation time for n-GaSb is in line with that measured via,e.g., four-wave mixing techniques. The major advantages of monochrome ps THz pump-probe in the study of electronic and optoelectronic materials are discussed in comparison with other ultrafast optoelectronic techniques. This work is relevant to the application of pulsed THz free-electron lasers and also to the development of advanced ultrafast measurement technique for the investigation of dynamical properties of electronic and optoelectronic materials.This publication has 20 references indexed in Scilit:
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