Emerging Group‐VI Elemental 2D Materials: Preparations, Properties, and Device Applications

Abstract
Due to the ultrathin thickness and dangling‐bond‐free surface, 2D materials have been regarded as promising candidates for future nanoelectronics. In recent years, group‐VI elemental 2D materials have been rediscovered and found superior in electrical properties (e.g., high carrier mobility, high photoconductivity, and thermoelectric response). The outstanding semiconducting properties of group‐VI elemental 2D materials enable device applications including high‐performance field‐effect transistors and optoelectronic devices. The excellent environmental stability also facilitates fundamental studies and practical applications of group‐VI elemental 2D materials. This Review first focuses on the crystal structures of group‐VI elemental 2D materials. Afterward, preparation methods for nanostructures of group‐VI materials are introduced with comprehensive studies. A brief Review of the electronic structures is then presented with an understanding of the electrical properties. This Review also contains the device applications of group‐VI elemental 2D materials, emphasizing transistors, photodetectors, and other appealing applications. Finally, this Review provides an outlook for the development of group‐VI elemental 2D materials, highlighting the challenges and opportunities in fundamental studies and technological applications.
Funding Information
  • Research Grant Council of Hong Kong (PolyU 152053/18E)