A nanoscale vacuum field emission gated diode with an umbrella cathode
Open Access
- 1 February 2021
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Nanoscale Advances
- Vol. 3 (6), 1725-1729
- https://doi.org/10.1039/d1na00004g
Abstract
A nanoscale field emission vacuum channel gated diode structure is proposed and a tungsten cathode with an umbrella-like geometry and sharp vertical edge is fabricated. The edge of the suspended cathode becomes the field emission surface. Unlike in the traditional transistor with the gate typically located between the source and the drain, the bottom silicon plate becomes the gate here and the anode terminal is located between the umbrella cathode and the gate. The fabricated devices show excellent diode characteristics and the gated diode structure is attractive for extremely low gate leakage.Keywords
Funding Information
- National Aeronautics and Space Administration
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