GaZn-VZn acceptor complex defect in Ga-doped ZnO
- 27 March 2018
- journal article
- research article
- Published by Springer Science and Business Media LLC in Science China Physics Mechanics and Astronomy
- Vol. 61 (7), 77311
- https://doi.org/10.1007/s11433-018-9195-7
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Ultrafast Nonlinear Response of Bulk Plasmons in Highly Doped ZnO LayersPhysical Review Letters, 2015
- ZnO as a Tunable Metal: New Types of Surface Plasmon PolaritonsPhysical Review Letters, 2014
- Molecular beam epitaxy of n-Zn(Mg)O as a low-damping plasmonic material at telecommunication wavelengthsApplied Physics Letters, 2013
- ZnO plasmonics for telecommunicationsApplied Physics Letters, 2013
- Optimization of Al-doped ZnO films for low loss plasmonic materials at telecommunication wavelengthsApplied Physics Letters, 2013
- Past achievements and future challenges in the development of optically transparent electrodesNature Photonics, 2012
- Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnOPhysical Review B, 2011
- Conductivity in transparent oxide semiconductorsJournal of Physics: Condensed Matter, 2011
- Searching for better plasmonic materialsLaser & Photonics Reviews, 2010
- Transparent conducting oxide semiconductors for transparent electrodesSemiconductor Science and Technology, 2005