Enhancing SiN waveguide optical nonlinearity via hybrid GaS integration
- 1 February 2021
- journal article
- research article
- Published by IOP Publishing in Journal of Optics
- Vol. 23 (2), 025802
- https://doi.org/10.1088/2040-8986/abe7d7
Abstract
Silicon nitride (SiN) has been demonstrated as an exceptional low-loss platform for integrated photonics, however its relatively small nonlinear refractive index limits its full potential in applications such as all-optical phase modulation, supercontinuum generation, and frequency combs. Here, we demonstrate that through hybrid integration with wide-bandgap 2D materials such as Gallium Sulfide (GaS), the nonlinear refractive index of the hybrid waveguide can be greatly increased (by 5-fold in our experiment). We fabricate high quality factor SiN/GaS microring resonators, with low two-photon absorption at telecom wavelengths, to demonstrate enhanced all optical modulation. We show that the hybrid platform is suitable for assessing the nonlinear properties of 2D materials, and we have used it to quantify, for the first time, the nonlinear refractive index of GaS. The GaS's value of n2 = 12 × 〖10〗^(-19) m^2 W^(-1) is 10 times larger than that of silicon nitride.Keywords
Funding Information
- NSF (1122374)
- ERC POPSTAR (647342)
This publication has 43 references indexed in Scilit:
- Strong Second-Harmonic Generation in Atomic Layered GaSeJournal of the American Chemical Society, 2015
- Investigation of Second- and Third-Harmonic Generation in Few-Layer Gallium Selenide by Multiphoton MicroscopyScientific Reports, 2015
- Two-dimensional material nanophotonicsNature Photonics, 2014
- Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High PhotoresponseScientific Reports, 2014
- Third order optical nonlinearity of grapheneNew Journal of Physics, 2014
- Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping2D Materials, 2014
- Ultrafast All-Optical Graphene ModulatorNano Letters, 2014
- Probing Symmetry Properties of Few-Layer MoS2 and h-BN by Optical Second-Harmonic GenerationNano Letters, 2013
- GaS and GaSe Ultrathin Layer TransistorsAdvanced Materials, 2012
- Third-Order Nonlinear Electromagnetic TE and TM Guided WavesPublished by Elsevier BV ,1991