The further investigation of N-doped β-Ga2O3 thin films with native defects for Schottky-barrier diode
- 5 January 2020
- journal article
- research article
- Published by Elsevier BV in Journal of Alloys and Compounds
- Vol. 812, 152026
- https://doi.org/10.1016/j.jallcom.2019.152026
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (61974119, 51602241, 61834005)
- Xi'an University of Science and Technology (2018QDJ036)
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