The growth kinetics of CsPbBr3 microwires on mica: an in situ investigation

Abstract

1D all-inorganic perovskites microwires horizontally aligned on mica show great potential in high performance optical and optoelectronic devices. In spite of the tremendous progress in their growth and properties studies, the growth mechanism for epitaxy of perovskites microwires on mica has not been well understood. Herein, we present a home-built in situ growth monitoring system to study the growth mechanism of the CsPbBr3 microwires on mica with the physical vapor deposition (PVD). Through in situ monitoring the growth of the CsPbBr3 microwires, the detailed growth behavior can be directly investigated. It is found that the length growth rate of the microwires may be enhanced with the large undercooling (the temperature difference between the precursor and the deposition substrate), which provides the possibility to achieve the rapid growth of the wires. Additionally, CsPbBr3 microwires with smaller diameter show the higher growth rate than that with larger diameter, which is consistent with the theoretical analysis based on the adatom diffusion. By increasing the undercooling, CsPbBr3 microwires with the length up to 200 mu m can be grown in 15 s, which is more efficient than the traditional vapor growth routes. Furthermore, the photoluminescence and high performance of the photodetector device based on these CsPbBr3 wire arrays indicate that the as-grown CsPbBr3 wires have the potential in the optical and optoelectronic device applications.