Optimization by simulation for photovoltaic applications of the quaternary semiconductor InGaAsP epitaxed on InP substrate
- 17 February 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Optical and Quantum Electronics
- Vol. 53 (3), 1-13
- https://doi.org/10.1007/s11082-021-02771-9
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gapOptical and Quantum Electronics, 2019
- Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applicationsMaterials Science in Semiconductor Processing, 2015
- Modeling and simulation of Al x Ga y In 1−x−y As/InP quaternary structure for photovoltaicInternational Journal of Hydrogen Energy, 2014
- Interpolation of quaternary III-V alloy parameters with surface bowing estimationsJournal of Applied Physics, 2007
- Influence of size effect and sputtering conditions on the crystallinity and optical properties of ZnO thin filmsOptics Communications, 2007
- Calculation of structural, optical and electronic properties of ZnS, ZnSe, MgS, MgSe and their quaternary alloy Mg1−xZnxSySe1−yMaterials Science and Engineering B, 2003
- Heterojunction band offsets and effective masses in III-V quaternary alloysSemiconductor Science and Technology, 1991
- Carrier-induced change in refractive index of InP, GaAs and InGaAsPIEEE Journal of Quantum Electronics, 1990
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978