Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method
Open Access
- 22 February 2020
- Vol. 13 (4), 996
- https://doi.org/10.3390/ma13040996
Abstract
Separation of refined silicon from Al–Si melt is still a puzzle for the solvent refining process, resulting in considerable waste of acid and silicon powder. A novel modified Czochralski method within the Al–Si alloy is proposed. After the modified Czochralski process, a large amount of refined Si particles was enriched around the seed crystalline Si and separated from the Al–Si melt. As for the Al–28%Si with the pulling rate of 0.001 mm/min, the recovery of refined Si in the pulled-up alloy (PUA) sample is 21.5%, an improvement of 22% compared with the theoretical value, which is much larger 1.99 times than that in the remained alloy (RA) sample. The content of impurities in the PUA is much less than that in the RA sample, which indicates that the modified Czochralski method is effective to improve the removal fraction of impurities. The apparent segregation coefficients of boron (B) and phosphorus (P) in the PUA and RA samples were evaluated. These results demonstrate that the modified Czochralski method for the alloy system is an effective way to enrich and separate refined silicon from the Al–Si melt, which provide a potential and clean production of solar grade silicon (SoG-Si) for the future industrial application.Funding Information
- National Natural Science Foundation of China (No.51874272, No.51804294 and No.U1960101)
- Sichuan Province Science and Technology Support Program (2019YFSY0029)
- State Key Laboratory of Refractories and Metallurgy (G201910)
- Natural Science Foundation of Anhui Province (No. 1808085ME121)
- Hefei Institutes of Physical Science, Chinese Academy of Sciences (No.PECL2018QN002, PECL2019ZD005 and PECL2019KF003; Grant No. YYJJ201624)
- State Key Laboratory of Pollution Control and Resource Reuse (NO. PCRRF18017)
This publication has 33 references indexed in Scilit:
- Segregation and Morphological Evolution of Si Phase during Electromagnetic Directional Solidification of Hypereutectic Al-Si AlloysMaterials, 2018
- Effect of Ti addition to Cu-Si alloy on the boron distribution in various phasesJournal of Alloys and Compounds, 2018
- Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)Materials, 2017
- From Metallurgical-Grade to Solar-Grade Silicon: An OverviewSilicon, 2017
- Mechanism of boron removal from Si–Al melt by Ar–H2 gas mixturesTransactions of Nonferrous Metals Society of China, 2016
- Removal of impurities from metallurgical grade silicon by addition of ZnO to calcium silicate slagSeparation and Purification Technology, 2016
- Solar grade silicon: Technology status and industrial trendsSolar Energy Materials and Solar Cells, 2014
- Phosphorus Removal from Silicon by Vacuum Refining and Directional SolidificationJournal of Electronic Materials, 2013
- Refining of metallurgical silicon by directional solidificationMaterials Science and Engineering B, 2011
- Low-cost solar grade silicon purification process with Al–Si system using a powder metallurgy techniqueSeparation and Purification Technology, 2010