Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance
- 23 September 2020
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 67 (11), 4636-4640
- https://doi.org/10.1109/ted.2020.3022607
Abstract
In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low temperature (typically < 20 K) when back gate is forward biased. Humps appear in the current, leading to oscillations of the transconductance with gate voltage, owing to mobility discontinuity due to intersubband scattering, in relation with the 2-D subband structure. The conditions for which these specific features appear in thin-film silicon-on-insulator (SOI) devices have been analyzed, by varying the temperature, drain voltage, silicon channel thickness, and gate length.Keywords
Funding Information
- French Authorities within the frame of NANO2022 Project
- European Research Council (ERC) Synergy QuCube (810504, ERC-2018-SyG)
- EU H2020 Research and Innovation Actions (RIA) Project SEQUENCE (871764)
This publication has 36 references indexed in Scilit:
- Source/drain induced defects in advanced MOSFETs: what device electrical characterization tellsphysica status solidi (c), 2013
- Multi-$V_{T}$ UTBB FDSOI Device Architectures for Low-Power CMOS CircuitIEEE Transactions on Electron Devices, 2011
- Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETsPublished by Springer Science and Business Media LLC ,2011
- Temperature and size dependences of electrostatics and mobility in gate-all-around MOSFET devicesSemiconductor Science and Technology, 2010
- Multiple gate devices: advantages and challengesMicroelectronic Engineering, 2005
- Modeling of electron mobility degradation by remote coulomb scattering in ultrathin oxide MOSFETsIEEE Transactions on Electron Devices, 2003
- Persistent photoconductivity and two-band effects in GaAs/As heterojunctionsPhysical Review B, 1990
- Freeze-out effects on NMOS transistor characteristics at 4.2 KIEEE Transactions on Electron Devices, 1989
- Observation of intersubband scattering in a 2-dimensional electron systemSolid State Communications, 1982
- Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperaturesPhysical Review B, 1979