Crystal analysis of grain boundaries in boron-doped diamond superconducting quantum interference devices operating above liquid helium temperature
- 11 May 2021
- journal article
- research article
- Published by Elsevier BV in Carbon
- Vol. 181, 379-388
- https://doi.org/10.1016/j.carbon.2021.04.097
Abstract
No abstract availableFunding Information
- Japan Society for the Promotion of Science (17H03526, 17H07192, 26220903)
- Ministry of Education, Culture, Sports, Science and Technology (JPMXP09F19NM0100)
- National Institute for Materials Science (JPMXP09A19NM0127)
This publication has 33 references indexed in Scilit:
- Strain mapping near a triple junction in strained Ni-based alloy using EBSD and biaxial nanogaugesActa Materialia, 2011
- Pressure effect of superconducting transition temperature for boron-doped (111) diamond filmsJournal of Physics: Conference Series, 2010
- Charge-insensitive qubit design derived from the Cooper pair boxPhysical Review A, 2007
- Metal-insulator transition and superconductivity in boron-doped diamondPhysical Review B, 2007
- Biomagnetism using SQUIDs: status and perspectivesSuperconductor Science and Technology, 2006
- Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond FilmsPhysical Review Letters, 2004
- Optical and electronic properties of heavily boron-doped homo-epitaxial diamondphysica status solidi (a), 2003
- Stationary properties of high-critical-temperature proximity effect Josephson junctionsSuperconductor Science and Technology, 1996
- Radio-Frequency Effects in Superconducting Thin Film BridgesPhysical Review Letters, 1964
- Very High Frequency Absorption in SuperconductorsPhysical Review B, 1956