Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy

Vertical GaN-on-GaN Schottky barrier diode (SBD) fully grown by hydride vapor phase epitaxy (HVPE) was first demonstrated in this article. Due to the low-carbon impurity concentration grown by HVPE, the field effective mobility has been increased from 734 to 1188 cm $^{\text{2}}\cdot$ V $^{-\text{1}}\cdot$ s $^{-\text{1}}$ . The fabricated device with this technology shows a low turn-on voltage of 0.52 V and a high I $_{\biosc{on}}$ / I $_{\biosc{off}}$ ratio of 7.1 $\times$ 10 $^{\text{9}}$ . The specific ON resistance $\textit{R}_{\biosc{on}}$ was 1.69 m $\Omega \cdot$ cm $^{\text{2}}$ at the current density of 500 A/cm $^{\text{2}}$ . High breakdown voltage $\textit{V}_{\text{BR}}$ of 1370 V was achieved using He implantation technology. Among the reported vertical GaN SBDs with an indicated anode size, the highest figure of merit (FOM) ( $\textit{V}_{\text{BR}}^{\text{2}}/\textit{R}_{\biosc{on}}\text{)}$ of 1.1 GW/cm $^{\text{2}}$ has been achieved to date.
Funding Information
  • National Natural Science Foundation of China (61974144, 62004127)
  • Key-Area Research and Development Program of Guangdong (2020B010174003)
  • Guangdong Science Foundation for Distinguished Young Scholars (2022B1515020073)
  • Shenzhen Science and Technology Program (JCYJ20220818102809020)

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