International Journal of Materials Science and Applications

Journal Information
ISSN : 2327-2635
Published by: Science Publishing Group (10.11648)
Total articles ≅ 315
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Malomo Dosu, Olasupo Abdulhakeem Dapo, Odidi Donald Okpo, Adewuyi Sulaiman Olalekan, Egharevba Owen, Ehis-Iyoha Esohe, Momoh Dauda, Oseghale Faithful, Okpara Efe Godwin, Okoh Kenneth, et al.
International Journal of Materials Science and Applications, Volume 10; https://doi.org/10.11648/j.ijmsa.20211003.11

Modou Pilor, Bouchaib Hartiti, Alle Dioum, Hicham Labrim, Youssef Arba, Amine Belafhaili, Mounia Tahri, Salah Fadili, Bassirou Ba, Philippe Thevenin
International Journal of Materials Science and Applications, Volume 10; https://doi.org/10.11648/j.ijmsa.20211001.14

Muhammad Talha Hanif, Rehan Zahid, Riaz Mufti, Muhammad Waqas, Tehreem Naveed
International Journal of Materials Science and Applications, Volume 10; https://doi.org/10.11648/j.ijmsa.20211003.13

Fang Liu, Dong Liu, Pengzong Guo, Guo Li, Rui Yang
International Journal of Materials Science and Applications, Volume 10; https://doi.org/10.11648/j.ijmsa.20211001.13

Peter Franze, Germar Schneider, Clara Zaengle, Markus Pfeffer, Stefan Kaskel
International Journal of Materials Science and Applications, Volume 9; https://doi.org/10.11648/j.ijmsa.20200901.13

Abstract:
Front-end manufacturing of power semiconductor devices requires numerous different processes and materials. To control the complexity of fully automated 300 mm manufacturing lines, which typically utilize closed wafer containers, so called FOUPs (Front Opening Unified Pod), a systematic FOUP management concept is mandatory. This concept has to fulfill the quality targets in terms of organic and inorganic contaminants to assure the highest yield level of the semiconductor products. The focus of this study is to understand the behavior of airborne molecular contaminations (AMC) and to define strategies to prevent yield loss driven by AMC. The first step was to achieve a comprehensive knowledge of the AMC level within the different process steps of a selected power technology. Sampling and analysis procedures based on laser spectroscopy, measurements of electrical conductivity and mass spectrometry systems were used to understand the AMC level of the investigated components. A special automated research platform to analyze the gas phase in the FOUPs was used within the 300 mm high volume power semiconductor fab at Infineon Technologies Dresden. A pronounced dependence of the investigated component level on the different production steps was found. First offline root cause analyses due to contaminations of FOUPs with boron were performed using mass spectrometry, and the air filter systems used within the 300 mm cleanroom could be identified as a second source for boron contaminations. Other special experiments investigated the time dependency of the AMC level in the FOUP atmospheres. With this work, Infineon Dresden has established methods and strategies to prevent AMC-caused yield losses.
Zeynep Ayguzer Yasar, Richard Haber
International Journal of Materials Science and Applications, Volume 9; https://doi.org/10.11648/j.ijmsa.20200901.12

Abstract:
In this current paper, oxygen content of a fine particle size SiC (H. C. Starck UF 25 Silicon Carbide) and coarser particle size SiC (Saint Gobain Silicon Carbide) were modified by using different concentrations of HF for etching. Fully dense silicon carbide ceramics (>99% th. density) were produced by the spark plasma sintering technique at 1950 °C under an applied pressure of 50 MPa for 5 min hold with boron carbide and carbon addition. Archimedes method, scanning electron microscopy, and the ultrasound analysis were used to examined density, microstructure, elastic (E), shear (G), and bulk (K) moduli of dense silicon carbide ceramics to investigate the effect of oxygen impurities on the densification and the properties of silicon carbide. The results showed that high oxygen content is detrimental to the final density of SPS silicon carbide. When the oxygen content increased from 0.60 to 5.92 wt.%, the relative density decreased from 99.99% to 96%. For both SiC powders, by increasing the etching time, the grain size of SiC decreased. It means that the high oxygen caused grain growth. Ultrasound analysis results showed that the high oxygen content affected the elastic properties. SiC samples with the high oxygen content had a lower elastic moduli, shear moduli and bulk moduli. It was clear that increasing the oxygen content decreased the elastic properties.
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