Modern Electronic Materials

Journal Information
ISSN : 2452-1779
Published by: Elsevier BV (10.1016)
Total articles ≅ 76
Current Coverage

Latest articles in this journal

Mikhail А. Borik, Vasilij R. Borichevskij, Vladimir T. Bublik, Tatyana V. Volkova, Aleksej V. Kulebyakin, , , , , Sergei V. Seryakov, et al.
Published: 1 December 2017
Modern Electronic Materials, Volume 3, pp 142-147;

Vyacheslav A. Kharchenko
Published: 1 December 2017
Modern Electronic Materials, Volume 3, pp 154-157;

Alexander B. Shvartsburg, Mikhail D. Malinkovich, Alexander M. Kislyuk
Published: 1 December 2017
Modern Electronic Materials, Volume 3, pp 162-167;

Daniya Mukhamedshina, Konstantin Mit’, Nikolay Chuchvaga, Nurlan Tokmoldin
Published: 1 December 2017
Modern Electronic Materials, Volume 3, pp 158-161;

Published: 9 November 2017
Modern Electronic Materials, Volume 3, pp 148-153;

We used mathematical modeling to compare the stress and deformation in a Bi0.4Sb1.6Te3 solid solution base thermoelectric material for extrusion through different diameter dies. The results show that extrusion through a 20mm diameter die produces a more inhomogeneous deformation compared with extrusion through a 30mm diameter die. Extrusion through a die of a larger diameter produces a structure that is coarser but has a more homogeneous grain size distribution. The degree of preferential grain orientation is higher for extrusion through a larger diameter die. We found a change in the lattice parameter of the solid solution along the extruded rod, correlating with detect formation during extrusion. The concentration of vacancies is higher for extrusion through a smaller diameter die. This difference between the structures results from a more intense dynamic recrystallization for a smaller diameter die. Increasing the die diameter and lowering the extrusion temperature allow retaining the thermoelectric properties of the material due to a better texture.
Nina S. Kozlova, Vladimir R. Shayapov, Evgeniya V. Zabelina, Anna P. Kozlova, Roman N. Zhukov, , Mikhail D. Malinkovich, Marina I. Voronova
Published: 1 September 2017
Modern Electronic Materials, Volume 3, pp 122-126;

Lithium niobate films on silicon substrates have been synthesized by high-frequency magnetron sputtering of a target. The spectral dependences of the reflectance in the 300–700 nm range at small incidence angles and the angular dependence of p- and s-polarized light for a discrete set of wavelengths from 300 to 700 nm with wavelength increments of 50 nm, for angles of 1 arc deg, have been obtained using spectrophotometry. The refractive indicies, the film thickness and the extinction coefficients have been determined using a numerical method for solving inverse problems. The initial approximations for the solution of inverse problems have been defined using methods based on the estimation of the interference extrema positions in the reflection spectra. The resultant refractive indicies of the film differ from those typical of LiNbO3 single crystals. These differences are attributed to the structural disorder induced by the predominant crystallite orientation and the absorption in the film
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