ISSN / EISSN : 09574484 / 13616528
Current Publisher: IOP Publishing (10.1088)
Total articles ≅ 17,708
Google Scholar h5-index: 66
Latest articles in this journal
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3e28
The publisher has not yet granted permission to display this abstract.
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3e1d
Abstract:The high price and elemental scarceness of precious metals triggered a search of non-noble-metal catalysts for the OER process. Herein, with the assistance of MOFs, a core/shell ZnCo2O4/ZnO nanoarray with an amorphous carbon protecting layer, which grown on carbon fiber was on-situ topologically generated. The resulting catalyst shows much enhanced OER performance under alkaline condition, requiring a low as 279 mV of overpotential to reach a 10 mA cm-2 of current density. Our work may open up a new way for exploiting MOF derived non-noble-metal electrocatalysts for various electrochemical applications
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3f07
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3ef7
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3f03
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3ee7
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab3ee4
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab4087
Abstract:By means of density functional theory (DFT) calculations, we successfully predict two stable two-dimensional (2D) triangular borophene, namely B3H and B6O. Our results indicate that B3H is a Dirac material, and its cone point is located at the K point of the Brillouin zone (BZ). B6O is identified to have node-line ring and Dirac cones together. Its node-line ring formed by the intersection of the extend energy band from the two Dirac cones located on K point. This modified 2D borophene has great thermal and dynamic stability due to the electron transfer from the triangular boron lattice to O atoms. The electronic structures of B6O nanofilm demonstrate novel properties such as two Dirac cones, more than 1.3eV linear dispersion bands at some points of the BZ, as well as the excellent transport properties for the extremely high mobility brought by the combination of the node-line semimetal and Dirac cones. Our study may motivate the potential applications of 2D materials in nanoelectronics.
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab4084
Abstract:WO3 is a typical photoanode material for photoelectrochemical (PEC) water splitting. However, the PEC activity of WO3 photoanode is limited by its poor visible light absorption as well as severe carrier recombination at electrode/electrolyte interface. Herein, we integrate small-band-gap CdIn2S4 nanoplates with hydrothermally-grown WO3 nanowall arrays to form into a three-dimensional (3D) WO3/CdIn2S4 heterojunction through a chemical bath deposition (CBD) process. The synthesis parameters of CdIn2S4, including reaction time and temperature, have been tuned to optimize the PEC performance. The WO3/CdIn2S4 composite photoanode prepared at 50 °C for 5 h exhibits the highest photocurrent of 1.06 mA cm-2 at 1.23 V vs. reversible hydrogen electrode (RHE) without the presence of holes scavenger, which is about 5.9 times higher than that of bare WO3 photoanode. The band alignment between WO3 and CdIn2S4 is confirmed by the ultraviolet-visible light absorption spectra and ultraviolet photoelectron spectra. The PEC performance enhancement is attributed to the enhanced light absorption benefiting from the small band-gap of CdIn2S4 and efficient charge separation originating from the type II alignment between WO3 and CdIn2S4.
Nanotechnology, Volume 30; doi:10.1088/1361-6528/ab4079
Abstract:PCM (phase-change memory) is an important class of data storage, operating based on the Joule heating-induced reversible switching of chalcogenide alloys. Nanoscale PCM often requires advanced microfabrication techniques such as dry (plasma) etching, but the possible impacts of process damages or imperfections on the device performance still remain relatively unexplored. This is critical because some chemical etching species are known to cause over-etching with rough edge onto the sidewall of a phase-change material. It is also possible that the phase-change material experiences a composition change due to etching-induced re-deposition of by-products or thermal stress. In this study, a finite-element simulation is performed to understand the effect of dry etching on the RESET characteristics of a nanoscale PCM device to provide a guideline on the PCM manufacturing and cell design.