Journal of Physics D: Applied Physics

Journal Information
ISSN / EISSN : 00223727 / 13616463
Current Publisher: IOP Publishing (10.1088)
Total articles ≅ 28,520
Google Scholar h5-index: 67
Current Coverage
SCOPUS
SCIE
COMPENDEX
Archived in
SHERPA/ROMEO
EBSCO
Filter:

Latest articles in this journal

Xiong-Jun Shang, Hai-Rong He, Hui Yang, Qian He, Ling-Ling Wang, Yu Huang, Chu-Jun Zhao
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab3f8d

Zeyang Zhao, Guangwu Pan, Weibin Qiu, Zeyu Wang, Junbo Ren, Hengjie Zhou, Pingping Qiu, Qiang Kan
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab3f6c

Dahai Yang, Yan Li, Duo Deng, Jingfu Ye, Yi Liu, Jie Lin
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab3fc2

The publisher has not yet granted permission to display this abstract.
Sachin Gupta, F Matsukura, Hideo Ohno
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab3fc6

The publisher has not yet granted permission to display this abstract.
Qi You, Zhongfu Li, Leyong Jiang, Jun Guo, Xiaoyu Dai, Yuanjiang Xiang
Journal of Physics D: Applied Physics; doi:10.1088/1361-6463/ab4697

Abstract:Surface plasmon resonance (SPR) with bulk Dirac semimetals (BDS) has been proposed to enhance the Goos-Hänchen (GH) shift. It is found that large positive and negative GH shift can be obtained by adjusting the thickness of BDS film, and the GH shift is very sensitive to the Fermi level of BDS film. By changing the Fermi level of BDS film, we can get a controllable negative GH shift. The largest GH shift of the proposed configuration as large as 361.4 times of the incident wavelength has be obtained. Compared with the traditional SPR structure, the GH shift is increased by nearly 13.4 times, which indicates that BDS is expected to replace the traditional SPR structure to excite the stronger SPR. Finally, the numerical simulation results further verify that the giant shift can be obtained by finite width Gaussian beam in our proposed calculation. Based on this giant and controllable GH shift, it may have potential applications in tunable sensors, switches, filters, and other devices.
Shun Zhang, Juan Carlos Lasheras, Juan Carlos Del Alamo
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab3ec8

Geoffroy Kremer, Kejing Zhu, Thomas Pierron, Vincent Fournee, Julian Ledieu, Stephane Andrieu, Bertrand Kierren, Luc Moreau, Daniel Malterre, Ke He, et al.
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab3fc3

The publisher has not yet granted permission to display this abstract.
Marina B Shavelkina, Peter P Ivanov, A N Bocharov, R Kh Amirov, R. H. Amirov, Aleksey Bocharov
Journal of Physics D: Applied Physics, Volume 52; doi:10.1088/1361-6463/ab4075

Abstract:Graphene and hydrogenated graphene were synthesized in the plasma jet reactor under equal conditions using different collector geometry. Plasma was generated by the DC plasmatron using helium as plasma forming gas and propane-butane mixture as carbon precursor. In order to investigate an influence of input parameters on the productivity of the process the quasi-one-dimensional approach was used to calculate the distributions of temperature and velocity along the axis and along the radius of a cross-section of the reactor channel, conducting the plasma from plasmatron to the synthesis product collector. A correlation is found between the temperature profile and the condensed carbon content, the dominant component changing successively from C60 to C80.
Tao Wang, Hao Jin, Jianwei Li, Langhui Wan, Yadong Wei
Journal of Physics D: Applied Physics; doi:10.1088/1361-6463/ab462e

Abstract:As the devices approach their scaling limit, finding new material or technology for next generation nano-devices becomes one of the most important tasks in modern electronic industry. Here, based on the first principles calculations, we have systematically studied the effects of gate voltages on black phosphorus/blue phosphorus (black-P/blue-P) van der Waals heterojunction (vdWh). Our results show that the black-P/blue-P vdWh can transform from a semiconductor to a metal when the gate voltage is strong enough. In addition, the local density of states (LDOS) at the Fermi level are mainly localized either in the topmost or bottom layer depending on the gate voltage. Based on these properties, a two-gated device is proposed. By changing the directions of the applied gate voltages on electrodes, the device can realize "ON" or "OFF" states. The calculated transmission coefficient of black-P/blue-P vdWh is sensitive to the direction of two gate voltages, which can be understood based on the distribution of electrons on different atomic layers and asymmetric structure in the heterojunction. These findings may serve as a guidance for designing of novel devices with improved performance based on the 2D materials.