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Results in Journal ACS Applied Electronic Materials: 1,414

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Yafei Ding, Shuyao Li, Jingwen Tian, Fan Wang, Yuxiang Shi, Xinglin Tao, Xingling Wang, Rui Lei,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00796

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, Valentina Triminì, , Mauro Lomascolo, Stefano Dicorato, Maria Losurdo, Adriana Passaseo,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00894

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, Yuki Hiruma, Yuji Yoshihashi, Masashi Uebe, Akihiro Ito
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00801

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Jagadeshvaran P L, Kamlesh Panwar, Indumathi Ramakrishnan,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00874

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Qi Huang, Yadong Jiang, Zaihua Duan, Zhen Yuan, Bohao Liu, Yajie Zhang, Qiuni Zhao, Yongliang Li,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00930

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Beilei Yuan, Haoming Wei, Jingwei Li, Yu Zhou, Fan Xu, ,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c01033

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Jagadish Rajendran, Sakthi Priya Ramalingam,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00899

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Yi-Chiang Sun, Giovanni Boero,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00884

Abstract:
Embedding liquid metals (LMs) into an elastomer is emerging as a promising strategy for stretchable conductors. Existing manufacturing techniques are struggling between spatial resolution and process complexity and are limited to chemically resistant substrates. Here, we report on a hybrid process combining stencil lithography and centrifugal force-assisted patterning of liquid metal for the development of LM-based stretchable conductors. The selective wetting behavior of oxide-removed eutectic gallium–indium (EGaIn) on metal patterns defined by stencil lithography enables micrometer scale LM patterns on an elastomeric substrate. Stencil lithography allows for defining metal regions without harsh chemical treatments, making it suitable for a wide range of substrates. Microscale LM patterns are achieved by efficiently removing the excess material by the centrifugal forces experienced from spinning the substrate. The proposed approach allows for the creation of LM patterns with a line width as small as 2 μm on a stretchable poly(dimethylsiloxane) (PDMS) substrate. The electrical measurement results show that the fabricated EGaIn devices can endure 40% mechanical strain over several thousands of cycles. Furthermore, a stencil design using microbridges is proposed to address the mechanical stability issue in stencil lithography. An EGaIn conductor with a serpentine structure and an interdigitated capacitor are fabricated and characterized. The results demonstrate that the patterned serpentine conductors retain their functionality with applied mechanical strain up to 80%. The performance of the interdigitated capacitors upon applied strain is in good agreement with the theoretical estimation. Finally, we demonstrate our approach also on poly(octamethylene maleate (anhydride) citrate) (POMaC) substrates to broaden the use of the proposed method to not only flexible and stretchable but also biodegradable substrates, opening a way for in vivo transient microsystem engineering. The work presented here provides a versatile and reliable approach for manufacturing stretchable conductors.
, Beomjun Ju, , Caitlin G. Knowles, Zoë Rosenberg, Tashana J. Flewwellin, Furkan Kose,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00802

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, Dongfang Yang, Shijing Yan, Jiatong Sun, Chao Ping Chen,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00893

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, Jiangliu Luo, Yuheng Lin, Zhichen Lin, Xiao Liu, Jinlan He, Wenjie Yu, Qiang Liu, Tongbo Wei, Jiankun Yang, et al.
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00882

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Saurabh Khuje, Aaron Sheng, Jian Yu,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00905

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Huijuan Ran, Fei Li, Rong Zheng, Wenjing Ni, Zheng Lei, Fuli Xie, Xuewei Duan, Ruijun Han, Na Pan, Jian-Yong Hu
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00998

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Hritinava Banik, Surajit Sarkar, Debajyoti Bhattacharjee,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00750

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Changming Qu, , Yu Xiao, Shaochun Zhang, Hanyun Liu, Guofeng Song
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00833

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Hongyi Dou, Xingyao Gao, Di Zhang, Samyak Dhole, Zhimin Qi, Bo Yang, Nazmul Hasan, , Quanxi Jia, , et al.
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00791

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Adam Jönsson, Johannes Svensson, Elisabetta Maria Fiordaliso, Erik Lind, , Lars-Erik Wernersson
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00729

Abstract:
Thin vertical nanowires based on III–V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length Lg of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage VT shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III–V nanowire devices.
, Yoon-Gu Kang, Kodai Ichihashi, , Varghese Swamy, , , Ken-Ichi Shudo,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00765

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, Daniel Hauck, Dominic Barthlott, Manuela Erbe, Jens Hänisch, Bernhard Holzapfel
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00861

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Navdeep Singh Gandhi, Rajdeep Dhar, Fiheon Imroze, Mithun Chennamkulam Ajith, Prashanth Kumar Manda,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00671

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, Eugénie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Monica Burriel, Carmen Jimenez, , Olivier Renault
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00968

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Hyeji Choi, Soyeong Kwon, Jungeun Song, Jaerang Lim, BoJung An, Soo Ho Choi, , ,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00773

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Chuncheng Wang, Gang Li, Liang Xu, Junjie Li, Dailin Zhang, Tao Zhao, , Pengli Zhu
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00857

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, Meng Jia, Maria Gabriela Sales, Yong Zhao, Guangyang Lin, , Chaiwarut Santiwipharat, , Stephen McDonnell, Yuping Zeng
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00909

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Taha Y. Posos, Oksana Chubenko, Sergey V. Baryshev
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00789

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Braulio Beltrán-Pitarch,
ACS Applied Electronic Materials, Volume 3, pp 4803-4808; https://doi.org/10.1021/acsaelm.1c00670

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Rui Feng, Badreddine Ratni, Jianjia Yi, Hailin Zhang, André de Lustrac,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00786

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Shingo Genchi, Ai I. Osaka, Azusa N. Hattori, , Takashi Taniguchi, Hidekazu Tanaka
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00803

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Chanil Park, Jeong Min Kim, Youngno Kim, Soyoung Bae, Minseok Do, Soeun Im, Sinseok Yoo,
ACS Applied Electronic Materials, Volume 3, pp 4781-4792; https://doi.org/10.1021/acsaelm.1c00664

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Zhe Wang,
ACS Applied Electronic Materials, Volume 3, pp 5114-5123; https://doi.org/10.1021/acsaelm.1c00855

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, Kazuhiro Nonaka, Yasutake Koishi, Shuichi Ishida, Tatsuo Tabaru, Yasushi Sato
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00603

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Govind Kumar Sharma, Nirmala Rachel James
ACS Applied Electronic Materials, Volume 3, pp 4657-4680; https://doi.org/10.1021/acsaelm.1c00827

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Arnab Ganguly, Senfu Zhang, Ioan Mihai Miron, Jürgen Kosel, , Aurelien Manchon, , Dalaver H. Anjum,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00592

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Siqi Yin, Jiacheng Sun, Yiming Sun, Leilei Qiao, Wenxuan Zhu, Feng Pan, Xiaozhong Zhang,
ACS Applied Electronic Materials, Volume 3, pp 5059-5065; https://doi.org/10.1021/acsaelm.1c00808

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Xiaobo Li, Jianbin Zhang, Nan Zhou, ,
ACS Applied Electronic Materials, Volume 3, pp 5138-5146; https://doi.org/10.1021/acsaelm.1c00891

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Sourav Chowdhury, Ram J. Choudhary, Deodatta M. Phase
ACS Applied Electronic Materials, Volume 3, pp 5095-5101; https://doi.org/10.1021/acsaelm.1c00831

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Jaber Saghaei, Tanja Leitner, Van Thi Ngoc Mai, Chandana Sampath Kumara Ranasinghe, , , Almantas Pivrikas,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00630

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Tomohiro Ichinose, Daisuke Miura,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00688

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, Xinyue Fang, Friederike Wrobel, Meng-Kai Lin, Zhan Zhang, Kevin M. Peterson, , ,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00860

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