(searched for: doi:10.1103/physrevb.105.085107)
npj Quantum Materials, Volume 7, pp 1-9; https://doi.org/10.1038/s41535-022-00481-3
Motivated by reports of metallic behavior in the recently synthesized RuI3, in contrast to the Mott-insulating nature of the actively discussed α-RuCl3, as well as RuBr3, we present a detailed comparative analysis of the electronic and magnetic properties of this family of trihalides. Using a combination of first-principles calculations and effective-model considerations, we conclude that RuI3, similarly to the other two members, is most probably on the verge of a Mott insulator, but with much smaller magnetic moments and strong magnetic frustration. We predict the ideal pristine crystal of RuI3 to have a nearly vanishing conventional nearest-neighbor Heisenberg interaction and to be a quantum spin liquid candidate of a possibly different kind than the Kitaev spin liquid. In order to understand the apparent contradiction to the reported resistivity ρ, we analyze the experimental evidence for all three compounds and propose a scenario for the observed metallicity in existing samples of RuI3. Furthermore, for the Mott insulator RuBr3, we obtain a magnetic Hamiltonian of a similar form to that in the much-discussed α-RuCl3 and show that this Hamiltonian is in agreement with experimental evidence in RuBr3.
Physical Review B, Volume 105; https://doi.org/10.1103/physrevb.105.174410
The van der Waals oxide dichlorides (, Ta, Nb, Ru, and Os; element), with different electronic densities, are attracting considerable attention. Ferroelectricity, spin-singlet formation, and orbital-selective Peierls phases were reported in this family with or electronic configurations, all believed to be caused by the strongly anisotropic electronic orbital degree of freedom. Here, using density functional theory and density matrix renormalization group methods, we investigate the electronic and magnetic properties of and with electronic configurations. Different from a previous study using with configuration, these systems with or do not exhibit a ferroelectric instability along the axis. Due to the fully occupied orbital in and , the Peierls instability distortion disappears along the axis, leading to an undistorted phase (No. 71). Furthermore, we observe strongly anisotropic electronic and magnetic structures along the axis. For this reason, the materials of our focus can be regarded as “effective one-dimensional” systems even when they apparently have a dominant two-dimensional lattice geometry. The large crystal-field splitting energy (between and orbitals) and large hopping between nearest-neighbor Ru and Os atoms suppresses the singlet state in ( or Os) with electronic density , resulting in a spin-1 system. Moreover, we find staggered antiferromagnetic order with wave vector along the -O chain direction ( axis) while the magnetic coupling along the axis is weak. Based on Wannier functions from first-principles calculations, we calculated the relevant hopping amplitudes and crystal-field splitting energies of the orbitals for the Os atoms to construct a multiorbital Hubbard model for the -O chains. Staggered AFM with spin structure dominates in our density matrix renormalization group calculations, in agreement with density functional theory calculations. Our results for and provide guidance to experimentalists and theorists working on this interesting family of oxide dichlorides.
Physical Review B, Volume 105; https://doi.org/10.1103/physrevb.105.195112
Quantum anomalous valley Hall effect (QAVHE), which combines both the features of QAHE and AVHE, is both fundamentally intriguing and practically appealing, but is experimentally challenging to realize in two-dimensional (2D) intrinsic magnetic materials to date. Here, based on first-principles calculations with the density functional theory approach, we predicted the electronic correlation-driven valley-dependent quantum phase transition from ferrovalley (FV) to half-valley-semiconductor (HVS) to QAVHE to HVS to FV phase in single-layer RuClBr. Remarkably, the QAVHE phase with an integer Chern number () and chiral spin-valley locking, which is induced by sign-reversible Berry curvature or band inversion between and orbitals, can achieve complete spin and valley polarizations for low-dissipation electronics devices. We also find that the electron valley polarization can be switched by reversing magnetization direction, providing a route of magnetic control of the valley degree of freedom. An effective model is proposed to clarify valley-dependent quantum phenomena. Additionally, electronic correlation has an important effect on the variations of the Curie temperature of single-layer RuClBr. These findings shed light on the possible role of correlation effects on valley-dependent physics in 2D materials and open alternative perspectives for multifunctional spin-valley quantum devices in valleytronics.