(searched for: doi:10.4236/detection.2018.61001)
Sensors, Volume 22; https://doi.org/10.3390/s22113978
Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p–i–n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W−1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.
RSC Advances, Volume 12, pp 8423-8428; https://doi.org/10.1039/d2ra00483f
High-temperature chloride passivation (HTCP) was proposed to improve the crystalline quality and electrical properties of PbSe epitaxial films. The PL intensity of HTCP (111) PbSe epitaxial films exhibits a 14 times higher intensity than that of as-grown films, and a threefold increase in Hall mobility has been obtained after HTCP at 300 °C for 2 h. The improvement of optical and electrical properties is attributed to the high-temperature defect passivation induced by the HTCP process. The HTCP process of PbSe films was implemented in a CdSe/PbSe heterojunction PV detector, which exhibits a room temperature peak detectivity D* of 8.5 × 108 cm Hz1/2 W−1 in the mid-wavelength infrared region under blackbody radiation (227 °C), demonstrating potential applications in the fabrication of mid-infrared detectors and emitters.
Journal of Alloys and Compounds, Volume 896; https://doi.org/10.1016/j.jallcom.2021.163119
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RSC Advances, Volume 9, pp 42516-42523; https://doi.org/10.1039/c9ra07664f
A mid-wave infrared (MWIR) uncooled PbSe-QDs/CdS p–n heterojunction photodiode has been fabricated using a wet-chemical synthesis route.