Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
- 4 June 2020
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 31 (46), 465706
- https://doi.org/10.1088/1361-6528/ab996c
Abstract
A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ~7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.Keywords
Funding Information
- INMoSt (ANR-19-CE08-0025)
- LabEx GANEX
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