Modulation of the resistive switching of BiFO3 thin films through electrical stressing
- 18 November 2019
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 53 (11), 115301
- https://doi.org/10.1088/1361-6463/ab5883
Abstract
The resistive switching (RS) of Au/BiFeO3/SrRuO3 samples was shown to be controllable by using a thermal treatment and an electrical stressing method. Such a modulation of resistive switching effect can be associated to the oxygen vacancy movement and redistribution within the BiFeO3 thin film and the trapping/detrapping of charge carriers at the interfaces. After the application of a negative voltage to the thin film for a stressing period, a resistive switching reversal effect occurred and the current retention ability in the low resistance state increased, indicating an increase in the trap density at the interface and an enhancement of the charge carrier trapping ability. The trap density, trap level, and Schottky barrier height all display corresponding trends in their values as a result of the modulation of RS effect. The results indicate that the greater the accumulation of oxygen vacancies at any the film/electrode interface, when a reverse bias is applied the higher the resistance ratio was under reverse bias. Its diffusion process was likely to be hindered and the trapped charge carriers could be retained after a long time of electrical stressing.Funding Information
- Beijing Natural Science Foundation of China (4162013)
- Beijing Innovation Center for Future Chips
- International Research Cooperation Seed Fund of Beijing University of Technology
- Natural Science Foundation (61201046)
This publication has 51 references indexed in Scilit:
- Polarization-tuned diode behaviour in multiferroic BiFeO3thin filmsJournal of Physics D: Applied Physics, 2012
- Electrical behavior of high resistivity Ce-doped BiFeO3 multiferroicPhysica B: Condensed Matter, 2012
- Resistance switching and white-light photovoltaic effects in BiFeO3/Nb–SrTiO3 heterojunctionsApplied Physics Letters, 2011
- A Resistive Memory in Semiconducting BiFeO3 Thin‐Film CapacitorsAdvanced Materials, 2011
- Electric modulation of conduction in multiferroic Ca-doped BiFeO3 filmsNature Materials, 2009
- Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal OxidesPhysical Review Letters, 2007
- Effect of carrier trapping on the hysteretic current-voltage characteristics inheterostructuresPhysical Review B, 2006
- Electric modulus approach to the analysis of electric relaxation in highly conducting (Na0.75Bi0.25)(Mn0.25Nb0.75)O3ceramicsJournal of Physics D: Applied Physics, 2005
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin FilmsJapanese Journal of Applied Physics, 2002
- Polarization retention in SrBi2Ta2O9 thin films investigated at nanoscaleJournal of Applied Physics, 2001