Recent progress in nanowire fabrication technology allows one to combine different types of III–V nanowires on a single substrate. Such fabrication was also demonstrated on a silicon substrate. These achievements open a new horizon of designing photonic and optoelectronic devices that utilize III–V nanowires and can be CMOS-compatible at the same time. In our recent research, we investigated the possibility to combine three different types of III–V nanowires on a single silicon substrate to obtain a lateral spectrum splitting multi-terminal nanowire array solar cell. We performed a numerical optimization of the array geometry to demonstrate that the resulted structure is able to reach a high detailed balance efficiency limit of 48.3% without light concentration. Here, we extend the analysis of the lateral spectrum splitting to a wider range of nanowire arrays that consist of several nanowire types (each forming a periodic subarray). We consider different nanowire arrangement patterns including non-rectangular periodic grids as well as different numbers of nanowires per array in order to find the limiting factors of nanowire-based lateral spectrum splitting. In addition to this, we also perform an analysis of the influence of transparent contacts on the spectrum splitting efficiency.