WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO
- 6 October 2021
- journal article
- research article
- Published by IOP Publishing in 2D Materials
- Vol. 9 (1), 015001
- https://doi.org/10.1088/2053-1583/ac2d3b
Abstract
Direct integration of transition metal dichalcogenides (TMDCs) on a ferroelectric such as hafnium zirconium oxide (HZO) using an industrially scalable technique is important for realizing various ferroelectric-based device architectures. The interface formed due to the processing conditions during direct deposition is the focus of the current study. In this work, molecular beam epitaxy (MBE) is used to directly deposit WSe2 on HZO substrates, and the effects of the MBE growth conditions, specifically high temperature and a high Se flux, are examined. Anneals of HZO under a Se flux, which serve to replicate the conditions during actual WSe2 deposition, result in the crystallization of amorphous as-deposited HZO substrates and incorporation of Se into the HZO. The crystallinity and composition of the HZO substrates affect the degree of Se incorporation. Some of the Se found in the HZO is an adsorbed layer that can be thermally desorbed, but it also has a chemisorbed component fully incorporated within the HZO lattice. Measurement of the electrical properties of the HZO films did not provide evidence that the incorporated Se was detrimental to the functionality of the HZO as a ferroelectric layer.Keywords
Funding Information
- National Science Foundation (DGE-1842490)
- National Nuclear Security Administration (DE-NA-0003525)
- Army Research Laboratory (Cooperative Agreement Number W911NF- 21-2-0082)
This publication has 64 references indexed in Scilit:
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodesApplied Physics Letters, 2013
- The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2Applied Physics Letters, 2011
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011
- The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2Microelectronic Engineering, 2011
- Interface instabilities and electronic properties of ZrO2 on silicon (100)Journal of Applied Physics, 2004
- Microstructure and interfaces of HfO2 thin films grown on silicon substratesJournal of Crystal Growth, 2004
- Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin filmsJournal of Crystal Growth, 2003
- Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide PrecursorsChemistry of Materials, 2002
- Oxygen Self-Diffusion in-QuartzPhysical Review Letters, 2001
- 18O diffusion through amorphous SiO2 and cristobaliteApplied Physics Letters, 1993