Band engineering of XBi (X = Si, Ge, Sn, and Pb) single layers via strain and surface chemical-modulation
- 1 February 2021
- journal article
- research article
- Published by Elsevier BV in Applied Surface Science
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China
This publication has 45 references indexed in Scilit:
- Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with BiNano Letters, 2014
- Large-Gap Quantum Spin Hall Insulators in Tin FilmsPhysical Review Letters, 2013
- Electric Control of the Giant Rashba Effect in Bulk GeTeAdvanced Materials, 2012
- Stable NontrivialTopology in Ultrathin Bi (111) Films: A First-Principles StudyPhysical Review Letters, 2011
- Localized edge states in two-dimensional topological insulators: Ultrathin Bi filmsPhysical Review B, 2011
- Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]The Journal of Chemical Physics, 2006
- Generalized Gradient Approximation Made SimplePhysical Review Letters, 1996
- Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis setPhysical Review B, 1996
- Projector augmented-wave methodPhysical Review B, 1994
- Nosé–Hoover chains: The canonical ensemble via continuous dynamicsThe Journal of Chemical Physics, 1992