Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors
- 1 July 2018
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
Abstract
Ferroelectric FETs (FeFETs) are emerging as a promising nano device candidate for the next-generation energy-efficient embedded nonvolatile memory (NVM). This promise comes from not only the CMOS-scaling compatibility, but also the compact fusion of logic and non-volatility in a single device that provides opportunities for efficient memory access and in-memory computing. This talk investigates circuit opportunities that harness these intriguing FeFET device features, providing insights into new computation paradigms beyond existing solutions.Keywords
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