InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications
Open Access
- 1 January 2021
- journal article
- research article
- Published by IOP Publishing in IOP Conference Series: Materials Science and Engineering
- Vol. 1019 (1), 012071
- https://doi.org/10.1088/1757-899x/1019/1/012071
Abstract
High electron mobility transistors (HEMTs) technologies based on AlGaN/GaN and InAlN/GaN heterostructures have been developed. The research focused on influence of epitaxial growth conditions and buffer doping profiles on electrical properties HEMTs. An output power density of 4W/mm at 17 GHz was demonstrated for InAlN/GaN HEMTs and 7W/mm at 10 GHz for AlGaN/GaN HEMTs.This publication has 14 references indexed in Scilit:
- Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical StressIEEE Transactions on Electron Devices, 2017
- Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its ModelingIEEE Transactions on Electron Devices, 2017
- Parasitic channel induced by an on-state stress in AlInN/GaN HEMTsApplied Physics Letters, 2017
- In-situ passivation of quaternary barrier InAlGaN/GaN HEMTsJournal of Crystal Growth, 2017
- Electrical Degradation of InAlN/GaN HEMTs Operating Under ON ConditionsIEEE Transactions on Electron Devices, 2016
- ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMTIEEE Electron Device Letters, 2016
- 3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2016
- InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF ApplicationsIEEE Transactions on Electron Devices, 2013
- 300-GHz InAlN/GaN HEMTs With InGaN Back BarrierIEEE Electron Device Letters, 2011
- Status of the Emerging InAlN/GaN Power HEMT TechnologyThe Open Electrical & Electronic Engineering Journal, 2008