Synthesis and photoluminescence of Si-doped boron carbide nanobelts
- 29 September 2021
- journal article
- research article
- Published by Canadian Science Publishing in Canadian Journal of Chemistry
- Vol. 100 (4), 252-256
- https://doi.org/10.1139/cjc-2021-0157
Abstract
It is of great interest to synthesize boron carbide nanomaterials and to explore their novel properties. We reported the synthesis of belt-like Si doping boron carbide nanomaterials at a low temperature of 1500C with no catalyst. The structures and formation mechanism were investigated. Broad photoluminescence spectra between 400-500 nm were observed under 380nm light excitation. The mechanism of blue shift of as-received samples in comparison with reported boron carbide nanostructured materials was discussed.Keywords
This publication has 21 references indexed in Scilit:
- Synthesis of boron carbide nanoflakes via a bamboo-based carbon thermal reduction methodJournal of Alloys and Compounds, 2013
- Boron carbide nanowires: low temperature synthesis and structural and thermal conductivity characterizationJournal of Materials Chemistry, 2012
- Boron Carbide: Structure, Properties, and Stability under StressJournal of the American Ceramic Society, 2011
- Facile synthesis of boron carbide elongated nanostructures via a simple in situ thermal evaporation processCeramics International, 2011
- Gap‐state related photoluminescence in boron carbidePhysica Status Solidi (b), 2010
- Facile Template‐Free Synthesis of Bi2O2CO3 Hierarchical Microflowers and Their Associated Photocatalytic ActivityChemphyschem, 2010
- B4C‐Nanowires/Carbon‐Microfiber Hybrid Structures and Composites from Cotton T‐shirtsAdvanced Materials, 2010
- Si enhances the growth of B4C nanowiresJournal of Crystal Growth, 2009
- Formation of Two-Dimensional Nanomaterials of Boron CarbidesThe Journal of Physical Chemistry B, 2004
- Photoluminescence of boron carbideJournal of Solid State Chemistry, 2004