The optimized memristor performance by utilizing the constrained domain wall motion in Pt/Co–Tb/Ta structure

Abstract

Spintronic devices can realize multilevel state storage and mimic the properties of the synapse, which enables their potential application in the field of artificial neural networks. In this paper, we demonstrate the existence of a large intermediate transition zone in current-induced magnetization switching curves of Pt/Co–Tb/Ta structures, and the number of states in the transition zone that can be manipulated by changing the Co content. The magneto-optical Kerr microscope imaging indicates that this property is related to the constrained domain wall motion in the Co–Tb films with large Co content. We also demonstrate the multilevel state storage properties of the sample by applying a sequence of current pulses. The synaptic plasticity behaviors were mimicked in these samples through regulating the value of Hall resistance by current pulses. The constrained domain wall motion supplies a simple but effective way to achieve multilevel state storage and show potential applications in neuromorphic computing.