Preparation of all-oxide β-Ga2O3/α-MoO3 heterojunction towards self-driven deep ultraviolet photosensor

Abstract

A self-driven all-oxide β-Ga₂O₃/α-MoO₃ heterojunction solar-blind ultraviolet (UV) photodetector is introduced in this work. The photodetector shows photo responsivity (R) of 0.59 mA/W, specific detectivity (D*) of 10¹¹ Jones and linear dynamic region (LDR) of 162.9 dB at 10 V, and R of 0.26 mA/W, D* of 4×10¹⁰ Jones and LDR of 89.44 dB at -10 V. In addition, it could also operate repeatably and stably at zero bias, illustrating that it is a self-driven photodetector. In one word, the fabricated β-Ga₂O₃/α-MoO₃ heterojunction has a potential to work as a self-driven solar-blind UV sensing device.