Unraveling the Resistive Switching Mechanisms in LaMnO3+δ-Based Memristive Devices by Operando Hard X-ray Photoemission Measurements
- 17 November 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Electronic Materials
- Vol. 3 (12), 5555-5562
- https://doi.org/10.1021/acsaelm.1c00968
Abstract
No abstract availableKeywords
Funding Information
- Agence Nationale de la Recherche (ANR-15-CE24-0018)
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