Tunable Band Alignments in 2D Ferroelectric α-In2Se3 Based Van der Waals Heterostructures
- 12 November 2021
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Electronic Materials
- Vol. 3 (11), 5114-5123
- https://doi.org/10.1021/acsaelm.1c00855
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education of the People's Republic of China (WK2060190084, WK2340000082)
- Ministry of Science and Technology of the People's Republic of China (2017YFA0204904, 2019YFA0210004)
- National Natural Science Foundation of China (11634011, 11674299)
- Chinese Academy of Sciences (XDB30000000)
- Anhui Initiative in Quantum Information Technologies (AHY170000)
This publication has 66 references indexed in Scilit:
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-PuThe Journal of Chemical Physics, 2010
- Chemical accuracy for the van der Waals density functionalJournal of Physics: Condensed Matter, 2009
- Recent advances in Schottky barrier conceptsMaterials Science and Engineering: R: Reports, 2001
- From ultrasoft pseudopotentials to the projector augmented-wave methodPhysical Review B, 1999
- The history and future of semiconductor heterostructuresSemiconductors, 1998
- Generalized Gradient Approximation Made SimplePhysical Review Letters, 1996
- Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis setPhysical Review B, 1996
- Projector augmented-wave methodPhysical Review B, 1994
- High-precision sampling for Brillouin-zone integration in metalsPhysical Review B, 1989